RB520S-30 0.2A 30V SOD-523 marking:B Small signal Schottky diode yfwdiode brand

Model: RB520S-30 

 Package: SOD-523 

 Average rectifier forward current l (FAV): 0.2A 

 Maximum repeat peak reverse voltage Vrrm: 30V 

 Positive electric surge peak I (FSM): 1A 

 Forward voltage: IF=200mA VF=0.6V 

 Reverse current: VR=10V IR=1uA 

 Number of pins: 2 

 Product Features: Low Forward Voltage Drop Flat Lead SOD-523 Small Plastic Package 

 Matte tin (Sn) lead finish 

 Product application: for low-loss, fast recovery, instrument protection, bias isolation and clamping applications 

 Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com. 

 Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes, low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast recovery rectified bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage regulator diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.